gate bias

The threshold voltage of a-Si ∶ H/ SiN_x ∶ H TFT will shift under long time gate bias stress, it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor.

a-Si∶H/sin x∶H TFT在长时间栅偏应力作用下，会产生阈值电压漂移，这主要是由绝缘层电荷注入和有源层亚稳态产生而引起的。

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And the gate bias dependency in the subthreshold region is also modeled for improved accuracy.

并且在模型中对亚阈区的栅偏依赖现象进行建模，提高了模型描述器件退化的准确度。

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Negative bias temperature instability ( NBTI) effect in pMOSFET's, which is induced by the application of negative gate bias and high temperature stress, is one of the key problems for reliability of MOS devices.

在PMOSFET上施加负栅压和高温应力后，出现的NBTI效应是超深亚微米MOS器件中重要的可靠性问题之一。

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Based on the analytic expressions of the IM products, intermodulation distortion ( IMD) sweet-spot and its dependencies on Taylor series coefficients, gate bias, drain bias, temperature, input signal levels and loads are analyzed.

根据二阶和三阶互调失真表达式，分析了互调失真抵消效应及其对泰勒级数系数的本征依赖性和对栅极偏置、漏极偏置、工作温度、输入信号功率大小及负载阻抗的外部依赖性。

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After the UV light is turned off, the rate of on-state current decay more slowly than off-state current due to the effect of gate bias voltage. 2.

紫外光照移除后，栅极偏压的作用使得开态电流衰减比关态电流慢许多。

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The mechanisms for a-Si ∶ H-TFT threshold voltage shift were analyzed. That is, the influence of charges injecting into SiN_x ∶ H gate insulator and the creation of meta-stable states in a-Si ∶ H to a-Si ∶ H-TFT threshold voltage shift under gate bias stress were analyzed.

分析了a-Si∶H-TFT阈值电压漂移的机理，即分析了栅偏应力下电荷注入到sin x∶H栅绝缘层和a-Si∶H中亚稳态的产生对TFT阈值电压漂移的影响。

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